차시 |
내용 |
1차시 |
[1] 1. Memory introduction |
2차시 |
[2] 2. DRAM Market & fabrication process |
3차시 |
[3] 3. Basic concept(resistance/voltage) |
4차시 |
[4] 4. Basic concept(MOS capacitor/transistor) |
5차시 |
[5] 5. Basic fabrication process |
6차시 |
[6] 6. CMOS process flow |
7차시 |
[7] 7. DRAM cell |
8차시 |
[8] 8. DRAM frontend process flow |
9차시 |
[9] 9. DRAM backend process flow |
10차시 |
[10] 10. DRAM 3D cell/Test |
11차시 |
[11] 11. DRAM Package/component |
12차시 |
[12] 12. DRAM core/Sense Amp. |
13차시 |
[13] 13. DRAM refresh & timing |
14차시 |
[14] 14. DRAM history & DDR |
15차시 |
[15] 15. 6F2 and BL structure |
16차시 |
[16] 16. LPDDR/GDDR/HBM |